Published date: Oct 12 2016

Journal Title: KnE Materials Science

Issue title: IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (ASRTU)

Pages: 183-189

DOI: 10.18502/kms.v1i1.583

R. Vidyasagarkholkin@urfu.ru

B. Camargo

E. Pelegova

K. Romanyuk

A.L. Kholkin

In this work, we study surface potential of graphite deposited on SiO₂/Si substrate using Kelvin Probe Force Microscopy (KPFM) and Electric Force Microscopy (EFM). The amplitude modulated KPFM (AM-KPFM) shows that the graphene layer work function is 4.69±0.02 eV, whereas frequency modulated KPFM (FM-KPFM) revealed 4.50±0.02 eV. The work function indifference of 0.19±0.02 eV was attributed to the superior resolution of FM-KPFM and higher detection sensitivity of AM-KPFM. Subsequent EFM mapping suggests that the phase monotonically increases with increasing applied dc bias voltage in the range from -5 V to 5 V. This phase shift is ascribed to the induced charge polarization at tip-graphene surface due to interatomic interactions induced by dc field effects.

[1] V. Meunier, AG. Souza Filho, and EB. Barros, Dresselhaus MS: Physical properties of low dimensional sp2-based carbon nanostructures., Rev Mod Phys, Rev Mod Phys, 88, Article ID 025005, (2016).


[2] A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, The electronic properties of graphene, Reviews of Modern Physics, 81, no. 1, 109–162, (2009).


[3] N. M. Gabor, J. C. W. Song, Q. Ma, N. L. Nair, T. Taychatanapat, K. Watanabe, T. Taniguchi, L. S. Levitov, and P. Jarillo-Herrero, Hot carrier-assisted intrinsic photoresponse in graphene, Science, 334, no. 6056, 648–652, (2011).


[4] G. Da Cunha Rodrigues, P. Zelenovskiy, K. Romanyuk, S. Luchkin, Y. Kopelevich, and A. Kholkin, Strong piezoelectricity in single-layer graphene deposited on SiO2 grating substrates, Nature Communications, 6, article no. 7572, (2015).


[5] Y. Liu, X. Dong, and P. Chen, Biological and chemical sensors based on graphene materials, Chemical Society Reviews, 41, no. 6, 2283–2307, (2012).


[6] T. Yager, A. Lartsev, S. Mahashabde, S. Charpentier, D. Davidovikj, A. Danilov, R. Yakimova, V. Panchal, O. Kazakova, A. Tzalenchuk, S. Lara-Avila, and S. Kubatkin, Express optical analysis of epitaxial graphene on SiC: Impact of morphology on quantum transport, Nano Letters, 13, no. 9, 4217–4223, (2013).


[7] R. Pearce, J. Eriksson, T. Iakimov, L. Hultman, A. Lloyd Spetz, and R. Yakimova, On the differing sensitivity to chemical gating of single and double layer epitaxial graphene explored using scanning kelvin probe microscopy, ACS Nano, 7, no. 5, 4647–4656, (2013).


[8] T. Filleter, K. V. Emtsev, T. Seyller, and R. Bennewitz, Local work function measurements of epitaxial graphene, Applied Physics Letters, 93, no. 13, Article ID 133117, (2008).


[9] Y.-J. Yu, Y. Zhao, S. Ryu, L. E. Brus, K. S. Kim, and P. Kim, Tuning the graphene work function by electric field effect, Nano Letters, 9, no. 10, 3430–3434, (2009).


[10] D. Ziegler, P. Gava, J. Güttinger, F. Molitor, L. Wirtz, M. Lazzeri, A. M. Saitta, A. Stemmer, F. Mauri, and C. Stampfer, Variations in the work function of doped single- and few-layer graphene assessed by Kelvin probe force microscopy and density functional theory, Physical Review B - Condensed Matter and Materials Physics, 83, no. 23, Article ID 235434, (2011).


[11] O. Kazakova, V. Panchal, and T. L. Burnett, Prevention of graphene restacking for performance boost of supercapacitors-a review, Crystals, 3, no. 1, 191–233, (2013).


[12] T. Burnett, R. Yakimova, and O. Kazakova, Mapping of local electrical properties in epitaxial graphene using electrostatic force microscopy, Nano Letters, 11, no. 6, 2324–2328, (2011).


[13] G. Cohen, E. Halpern, S. U. Nanayakkara, J. M. Luther, C. Held, R. Bennewitz, A. Boag, and Y. Rosenwaks, Reconstruction of surface potential from Kelvin probe force microscopy images, Nanotechnology, 24, no. 29, Article ID 295702, (2013).


[14] P. Girard, Electrostatic force microscopy: Principles and some applications to semiconductors, Nanotechnology, 12, no. 4, 485–490, (2001).


[15] F. Maeda, T. Takahashi, H. Ohsawa, S. Suzuki, and H. Suematsu, Unoccupied-electronic-band structure of graphite studied by angle-resolved secondary-electron emission and inverse photoemission, Physical Review B, 37, no. 9, 4482–4488, (1988).


[16] H. Hibino, H. Kageshima, M. Kotsugi, F. Maeda, F.-Z. Guo, and Y. Watanabe, Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy, Physical Review B - Condensed Matter and Materials Physics, 79, no. 12, Article ID 125437, (2009).