KnE Materials Science
ISSN: 2519-1438
The latest conference proceedings on physical materials, energy materials, electrical materials.
Effect Of Annealing On The Behavior Of Oxygen Dissolved In Germanium And Optical Properties Of Single Crystals
Published date: Oct 12 2016
Journal Title: KnE Materials Science
Issue title: IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (ASRTU)
Pages: 142-148
Authors:
Abstract:
The annealing effect in the temperature range from 350 to 450 °С on the behavior of interstitial oxygen Оi dissolved in germanium and on optical properties of single crystals has been investigated by Fourier transformed infrared spectrometry. It was found that oxygen band maximum of 843 cm–1 shifted toward the 856 cm−1 with oxygen concentration increasing after annealing at the oxygen partial pressure ranged from 1 to 103 Pа. The annealing at lower values led to the decrease of 843 cm–1 band intensity due to the formation of thermal donors (TD) on the basis of dissolved oxygen atoms Оi. It was established that TD formation and the decrease of unbound oxygen concentration affected optical properties of the crystals.
References:
[1] F. Dimroth and S. Kurtz, High-efficiency multijunction solar cells, MRS Bulletin, 32, no. 3, 230 235, (2007).
[2] D. Rakwal and E. Bamberg, Slicing, cleaning and kerf analysis of germanium wafers machined by wire electrical discharge machining, Journal of Materials Processing Technology, 209, no. 8, 3740 3751, (2009).
[3] S. Hegedus and A. Luque, Achievements and Challenges of Solar Electricity from Photovoltaics, Handbook of Photovoltaic Science and Engineering, 1–38, (2011).
[4] C. Claeys and E. Simoen, Germanium-Based Technologies, Germanium-Based Technologies,(2007).
[5] B. Depuydt, A. Theuwis, and I. Romandic, Germanium: From the first application of Czochralski crystal growth to large diameter dislocation-free wafers, Materials Science in Semiconductor Processing, 9, no. 4-5, 437–443, (2006).
[6] A. Chroneos and R. V. Vovk, Oxygen diffusion in germanium: interconnecting point defect parameters with bulk properties, Journal of Materials Science: Materials in Electronics, 26, no. 10, 7378–7380, (2015).
[7] T. Taishi, H. Ise, Y. Murao, T. Osawa, M. Suezawa, Y. Tokumoto, Y. Ohno, K. Hoshikawa, and I. Yonenaga, Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities, Journal of Crystal Growth, 312, no. 19, 2783–2787, (2010).
[8] B. Pajot, Clauws P: High resolution local mode spectroscopy of oxygen in germanium, 2, 911 914
[9] P. Clauws, Oxygen related defects in germanium, Mater Sci Eng B Solid State Mater Adv Technol, 36, no. 1, 213–220, (1996).
[10] I. A. Kaplunov, V. E. Rogalin, and M. Y. Gavalyan, The influence of impurity and isotopic composition of single-crystal germanium on optical transmission in the range of 520–1000 cm−1, Optics and Spectroscopy (English translation of Optika i Spektroskopiya), 118, no. 2, 240–246, (2015).
[11] B. Pajot, Clerjaud B: Optical absorption of impurities and defects in semiconducting crystals electronic absorption of deep centres and vibrational spectra, Springer, Berlin, 2013.
[12] K. Inoue, T. Taishi, Y. Tokumoto, Y. Murao, K. Kutsukake, Y. Ohno, M. Suezawa, and I. Yonenaga, Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies, Journal of Applied Physics, 113, no. 7, Article ID 073501, (2013).
[13] L. I. Khirunenko, Y. V. Pomozov, M. Sosnin, V. P. Markevich, L. I. Murin, V. V. Litvinov, A. Carvalho, R. Jones, J. Coutinho, S. Öberg, and P. R. Briddon, Complexes of self-interstitials with oxygen atoms in germanium, Materials Science in Semiconductor Processing, 11, no. 5, 344–347, (2008).
[14] O. Cryse and J. Vanhellomont, Clawus P: Determination of oxide precipitated phase and morphology in silicon and germanium using infra-red absorption spectroscopy. Mater Sci Semicond Process, 9, 9 (1, 246- 251, 2006.
[15] H. H. P. T. Bekman, T. Gregorkiewicz, I. F. A. Hidayat, C. A. J. Ammerlaan, and P. Clauws, Metastable thermal donor states in germanium: Identification by electron paramagnetic resonance, Physical Review B, 42, no. 16, 9802–9809, (1990).
[16] K. Inoue, T. Taishi, Y. Tokumoto, and Y. Murao, Kutsukake K: Formation of Thermal Double Donors in Ge, 1
[17] AF. Shimanskii and OI. Podkopaev, Baranov VN: Oxygen impurity in germanium single crystals determination by infrared spectrometry. Adv Mat Res, 1101, 115-119, 1101, 2015.
