KnE Engineering

ISSN: 2518-6841

The latest conference proceedings on all fields of engineering.

Study of Microrelief Influence on Optical Output Coefficient of GaN-based LED

Published date:Oct 08 2018

Journal Title: KnE Engineering

Issue title: Breakthrough directions of scientific research at MEPhI: Development prospects within the Strategic Academic Units

Pages:254–260

DOI: 10.18502/keg.v3i6.3001

Authors:
Abstract:

This work is devoted to the investigation of the influence on the light output coefficient of antireflective coatings by different configurations of the micro-relief formed on the light output surface of a GaN-based LED. The technology of the micro-relief fabrication in SiO2 -based antireflective coatings was developed with the use of electron-beam lithography (EBL) and contact photolithography. Simulation of the influence of the micro-relief of various proportions and configurations on the optical output coefficient was implemented. It was discovered that the micro-relief made with electron-beam lithography and contact photolithography increased the optical output coefficient.

References:

[1] Kish, F. A., Steranka, F. M., DeFevere, D. C., et al. (1994). Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP lightemitting diodes. Applied Physics Letters, vol. 64, no. 21, p. 2839.


[2] Krames M R, M. Ochiai-Holcomb, G. E. Höfler, et al. (1999). High-power truncatedinverted-pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency. Applied Physics Letters, vol. 75, p. 2365.


[3] Liu Zike, Gao Wei, Xu Chen, et al. (2010). Improved light extraction of wafer-bonded AlGaInP LEDs by surface roughening. Journal of Semiconductors, vol. 31, p. 114011.


[4] Schubert, E. F. (2006). Light-emitting Diodes. Cambridge: Cambridge University Press.

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