Published date:Oct 08 2018

Journal Title: KnE Engineering

Issue title: Breakthrough directions of scientific research at MEPhI: Development prospects within the Strategic Academic Units

Pages:126–135

DOI: 10.18502/keg.v3i6.2984

V Golovinv.s.golovin@gmail.com

D Romanovich

O Soboleva

A Podoskin

P Gavrina

V Kapitonov

D Veselov

S Slipchenko

N Pikhtin

We have developed a theoretical model of a two-section laser-thyristor. It is shown that using a 4 µm weakly doped p-base can increase blocking voltage up to 50 V, which makes it possible to generate 2 ns 10 A current pulses. It is demonstrated that the proposed device utilizes passive Q switching to generate high-power short optical pulses that account for up to 80% of output power. By picking the optimal passive section length, we have achieved optical pulses of ∼30 ps full width at half maximum (FWHM) and ∼100 W peak power.

Keywords: pulsed laser, semiconductor N-p-N-i-P heterostructure, laser-thyristor, dynamic model of pulsed laser

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