KnE Engineering
ISSN: 2518-6841
The latest conference proceedings on all fields of engineering.
The Technique for I–V Characteristic Measurements of MOSFETs from Output Stage of MOS ICs
Published date: Oct 08 2018
Journal Title: KnE Engineering
Issue title: Breakthrough directions of scientific research at MEPhI: Development prospects within the Strategic Academic Units
Pages: 74–78
Authors:
Abstract:
Experimental technique for measurements of I–V characteristics of MOSFETs from output stage of MOS ICs is developed and demonstrated using Schmitt trigger array 1594TL2T.
References:
[1] Bakerenkov, A. S. (2016). Experimental equipment for extraction of ELDRS conversion model parameters and its application for estimation of radiation effects in bipolar devices. IFMBE Proceedings, vol. 55, pp. 520–523.
[2] Pease, R. P., Schrimpf, R. D., Fletwood, D. M. (2009). ELDRS in bipolar linear circuits: A review. IEEEE Transactions on Nuclear Science, vol. 56, no. 4, pp. 1894–1908. DOI: 10.1109/TNNS.2008.2011485
[3] Pershenkov, V. S., Savchenkov, D. V., Bakerenkov, A. S., et al. (2009). The conversion model of low dose rate effect in bipolar transistors. RADECS 2009, Conference Proceedings. DOI: 10.1109/RADECS.2009.5994661
[4] Bakerenkov, A. S., Belyakov, V. V., Kozyukov, A. E., et al. (February 11, 2015). Temperature control system for the study of single event effects in integrate d circuits using a cyclotron accelerator. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers„ Detectors and Associated Equipment, vol. 7773, pp. 33–38. DOI: 10.10116/j.nima.2014.11.034
[5] Anashin, V. S., Kozyukov, A. E., Emeliyanov, V. V., et al. (2012). Equipment and test results of the electronic components to SEE in the temperature range. IEEE Radiation Effects Data Workshop, pp. 1–5.
