Published date:Apr 25 2018

Journal Title: KnE Energy

Issue title: VII International Conference on Photonics and Information Optics (PhIO)

Pages:317–326

DOI: 10.18502/ken.v3i3.2044

O Mavritskiioleg.mavr@gmail.com

A Chumakov

A Egorov

A Pechenkin

D Savchenkov

The substantive laser method for studying the radiation hardness of semiconductor devices, not requiring calibration by ions, called ”local irradiation”, is described. The essence of the local approach is in irradiating the sample sensitive volume with the ultrashort-pulsed laser beam at some distance from its focus plane, where the beam becomes rather wide and divergent. Assuming the single-photon absorption, the relationship between the laser pulse energy and the excess charge actually generated in irradiated sensitive volume is obtained by accurate measurement of the electrical response, that makes possible to take into account non-uniform optical losses and avoid additional calibration by ions. Some results, obtained using both the front-side and the backside local irradiation of devices, are presented. Comparison with results obtained by traditional methods using focused laser radiation with subsequent calibration by ions showed that laser-only measurements, based on described local irradiation, give the correct estimates of radiation hardness parameters.

Keywords: Ultrashort laser pulse, single-event effect, local laser irradiation, semiconductor device, integrated circuit.

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